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| Home > Program at a Glance |
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| Time |
Room |
| 18:00-19:30 |
Welcome Reception (Sicily Room (1F) |
| Time |
Room |
| GBR 1+2 |
GBR 3 |
GBR 4 |
Lobby
& Miami |
| Room A |
Room B |
Room C |
| 09:00-09:10 |
Opening Ceremony |
Exhibition |
| 09:10-10:00 |
[Plenary Talk I] Prof. Thomas Kuech (University of Wisconsin at Madison, USA)
Growth of Metastable Epitaxial Alloys: Approaches, Problems and Some Successes |
| 10:00-10:50 |
[Plenary Talk II] Prof. Alois Krost (Otto-von-Guericke-Universitat Magdeburg, Germany)
GaN-on-Si: A Platform for Electronic and Optoelectronic Devices |
| 10:50-11:10 |
Coffee Break |
| 11:10-12:40 |
[MoA1] LED-I |
[MoB1] Growth of III-V
Compound Semiconductors-I |
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| 12:40-14:00 |
Lunch (Charlie's (B1F), Sicily Room(1F), Capri Room(2F)) |
| 14:00-15:50 |
[MoA2] LED-II |
[MoB2] Growth of III-V
Compound Semiconductors-II |
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| 15:50-16:10 |
Coffee Break |
| 16:10-18:00 |
[MoA3] Basic Growth Studies |
[MoB3] Patterned and
Selective Area Epitaxy-I |
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 |
| Time |
Room |
| GBR 1+2 |
GBR 3 |
GBR 4 |
Lobby
& Miami |
| Room A |
Room B |
Room C |
| 08:30-10:20 |
[TuA1] LED-III |
[TuB1] III-V Devices |
|
Exhibition |
| 10:20-10:40 |
Coffee Break |
| 10:40-12:30 |
[TuA2] Growth of AlGaN Layers |
[TuB2] Patterned and
Selective Area Epitaxy-II |
|
| 12:30-14:00 |
Lunch (Charlie's (B1F), Sicily Room(1F), Capri Room(2F)) |
| 14:00-16:00 |
[TuA3] Growth of Non-
/Semi-Polar GaN Layers |
[TuB3] In Situ Monitoring
and Process Control |
|
| 16:00-18:00 |
Coffee Break |
Poster I |
 |
| Time |
Room |
| GBR 1+2 |
GBR 3 |
GBR 4 |
Lobby
& Miami |
| Room A |
Room B |
Room C |
| 08:30-09:20 |
[Plenary Talk III]
Dr. Cheolsoo Sone(Samsung Electronics, Korea) Recent Progress
of GaN-Based LED Technology |
|
Exhibition |
| 09:20-09:30 |
Break |
| 09:30-10:50 |
[WeA1] Heteroepitaxy |
[WeB1] Characterization-I |
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| 10:50-11:10 |
Coffee Break |
| 11:10-12:30 |
[WeA2] Growth of Quantum
Dots and Nano Structuress |
[WeB2] Characterization-II |
|
| 12:30-14:00 |
Lunch (Charlie's (B1F), Sicily Room(1F), Capri Room(2F)) |
| 14:00-16:00 |
[WeA3] Energy Technology
(Solar Cells, Thermoelectrics,
Piezoelectrics etc) |
[WeB3] Characterization-III |
|
| 16:00-18:00 |
Coffee Break |
Poster II |
| 18:30-20:00 |
Rump Session (Room A, Room B, Capri Room) |
| Time |
Room |
| GBR 1+2 |
GBR 3 |
GBR 4 |
Lobby
& Miami |
| Room A |
Room B |
Room C |
| 08:30-10:40 |
[ThA1] GaN on Si /
Electronic Devices |
[ThB1] II-VI Compound
Semiconductors |
|
Exhibition |
| 10:40-11:00 |
Coffee Break |
| 11:00-18:00 |
Excursion (Course A: Oedo / Course B: Taejongdae) |
| 18:00-18:30 |
Break |
| 18:30-20:30 |
Banquet |
| Time |
Room |
| GBR 1+2 |
GBR 3 |
GBR 4 |
Lobby
& Miami |
| Room A |
Room B |
Room C |
| 08:30-09:20 |
[Plenary Talk IV] Yasuhiko Arakawa (The University of Tokyo, Japan) Growth and Optical Properties of III-Nitride Quantum Dots toward Nanophotonics Application |
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| 09:20-09:30 |
Break |
| 09:30-11:00 |
[FrA1] Growth of InN
and In Rich InGaN Layers |
[FrB1] Nanostructures
and Hybrid Devices-I |
|
| 11:00-11:20 |
Coffee Break |
| 11:20-12:50 |
[FrA2] Narrow Bandgap
and Novel Materials |
[FrB2] Nanostructures
and Hybrid Devices-II |
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